trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 1 post office box 655303 ? dallas, texas 75265 operates from 3.6-v and 4.8-v power supplies for amps/nadc and gsm applications respectively unconditionally stable wide uhf frequency range 800 mhz to 1000 mhz 21 dbm and 23 dbm typical output power in amps/nadc and gsm applications respectively linear ramp control transmit enable/disable control advanced bicmos processing technology for low-power consumption, high efficiency, and highly linear operation minimum of external components required for operation surface-mount thermally enhanced package for extremely small circuit footprint description the trf8010 is an rf transmit driver amplifier for 900-mhz digital, analog, and dual-mode communication applications. it consists of a two-stage amplifier and a linear ramp controller for burst control in tdma (time division multiple access) applications. very few external components are required for operation. the trf8010 amplifies the rf signal from the preceding modulator and upconverter stages in an rf section of a transmitter to a level that is sufficient to drive a final rf power output device. the output impedance of rfout is approximately 50 w. but, since rfout is connected to an open-collector output device, minimal external matching is required. the device is enabled when the txen input is held high. a power control signal applied to the vpc input can ramp the rf output power up or down to meet ramp and spurious emission specifications in tdma systems. the power control signal causes a linear change in output power as the voltage applied to vpc varies between 0 v and 3 v. with the rf input power applied to rfin at 0 dbm and txen high, adjusting vpc from 0 v to 3 v increases the output power from a typical value of 54 dbm at vpc = 0 v to the output power appropriate for the application: 21 dbm typical for amps/nadc (advanced mobile phone service/north american digital cellular) operation 23 dbm typical for gsm (global system for mobile communications) operation forward isolation with the rf input power applied to rfin at 0 dbm, vpc = 0 v, and txen high is typically greater than 50 db. these devices have limited built-in esd protection. the leads should be shorted together or the device placed in conductive foa m during storage or handling to prevent electrostatic damage to the mos gates. please be aware that an important notice concerning availability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 gnd gnd rfin gnd nc vpc gnd nc v bb gnd gnd gnd rfout gnd gnd txen gnd v cc v cc gnd pwp package (top view) nc no internal connection production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters. copyright ? 1997, texas instruments incorporated
trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 2 post office box 655303 ? dallas, texas 75265 description (continued) the trf8010 is available in a small, surface-mount, thermally enhanced tssop 20-pin pwp (powerpad ? ) package and is characterized for operation from 40 c to 85 c. the pwp package has a solderable pad that can improve the package thermal performance by bonding the pad to an external thermal plane. the pad also acts as a low-inductance electrical path to ground and, for the trf8010, must be electrically connected to the pcb ground plane as a continuation of the regular package terminals that are designated gnd. functional block diagram bias/band gap reference linear ramp control v cc v bb rfin txen vpc 3 15 6 rfout 18 12, 13 9 terminal functions terminal i/o description name no. i/o description gnd 1, 2, 4, 7, 10, 11, 14, 16, 17, 19, 20 analog ground for all internal analog circuits. all signals are referenced to the ground terminals. nc 5, 8 no connection. it is recommended that all nc terminals be connected to ground. rfin 3 i rf input. rfin accepts signals between 800 mhz and 1000 mhz. rfout 18 o rf output. rfout is an open-collector output and requires a decoupled connection to v cc for operation. txen 15 i transmit enable input (digital). when txen is high, the output device is enabled. v bb 9 control section supply voltage. v cc 12, 13 first stage bias. vpc 6 i voltage power control. vpc is a signal between 0 v and 3 v that adjusts the output power from a typical value of 54 dbm to the maximum output power appropriate for the application. powerpad is a trademark of texas instruments incorporated.
trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 3 post office box 655303 ? dallas, texas 75265 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) 2 supply voltage range, v cc (see note 1) 0.6 v to 5.6 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input voltage range at txen, vpc 0.6 v to 5.6 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input power at rfin 10 dbm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction to case, r q jc (see note 2) 3.5 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction to ambient, r q ja (see note 3) 32 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous total power dissipation at t a = 25 c 3.9 w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature, t j 110 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . junction temperature, t j max 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating free-air temperature range, t a 40 c to 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg 65 c to 100 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 stresses beyond those listed under aabsolute maximum ratingso may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated under arecommended operating conditi onso is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. notes: 1. voltage values are with respect to gnd. 2. no air flow and with infinite heatsink 3. with the thermal pad of the device soldered to a 1-ounce copper (cu) ground plane on an fr4 board with no air flow recommended operating conditions min nom max unit supply voltage, v cc (see note 1) 3 5 v high-level input voltage at txen, v ih v cc 0.8 v low-level input voltage at txen, v il 0.8 v operating free-air temperature, t a 40 85 c note 1: voltage values are with respect to gnd. electrical characteristics over full range of operating conditions supply current, v cc = 3.6 v parameter test conditions min typ 3 max unit i cc su pp ly current from v cc operating at maximum power out txen high, vpc = 3 v 163 ma i cc s u ppl y c u rrent from v cc operating at minimum power out txen high, vpc = 0 v 7 ma 3 typical values are at t a = 25 c. supply current, v cc = 4.8 v parameter test conditions min typ 3 max unit operating at maximum power out txen high, vpc = 3 v 155 210 ma i cc supply current from v cc operating at minimum power out txen high, vpc = 0 v 7 ma power down txen low, vpc = 0 v 0.05 ma 3 typical values are at t a = 25 c.
trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 4 post office box 655303 ? dallas, texas 75265 amps/nadc operation, v cc = 3.6 v, txen high, vpc = 3 v, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit operating frequency range 824 849 mhz p o out p ut p ower p i = 0 dbm 21 dbm p o o u tp u t po w er p i = 0 dbm vpc = 0 v 58 dbm gain (small signal) p i = 20 dbm 27 db power added efficiency (pae) p i = 0 dbm 28% input return loss (internally matched) p i = 20 dbm 11 db output return loss (externally matched, small signal) p i = 20 dbm 11 db noise power in 30 khz bandwidth 45 mhz offset at p i = 0 dbm 97 dbm harmonics 2f 0 p i = 0 dbm 20 dbc harmonics 3f 0 p i = 0 dbm 50 dbc gsm operation, v cc = 4.8 v, txen high, vpc = 3 v, t a = 25 c (unless otherwise noted) parameter test conditions min typ max unit extended gsm operating frequency range 870 925 mhz p o out p ut p ower p i = 0 dbm 21.5 23 24.5 dbm p o o u tp u t po w er p i = 0 dbm vpc = 0 v 54 dbm gain (small signal) p i = 20 dbm 28 db power added efficiency (pae) p i = 0 dbm 29% input return loss (internally matched) p i = 20 dbm 11 db output return loss (externally matched, small signal) p i = 20 dbm 11 db harmonics 2f 0 p i = 0 dbm 28 22 dbc harmonics 3f 0 p i = 0 dbm 40 35 dbc noise p ower in 30 khz bandwidth 20 mhz above f 0 p i = 0 dbm 95 dbm noise po w er in 30 kh z band w idth 10 mhz above f 0 p i = 0 dbm 96 dbm stability, amps/nadc and gsm operation parameter test conditions min typ max unit stability output vswr 2 < 6:1 all phases, v cc < 5.6 v, p i = 0 dbm, p o 22 dbm, output frequency band: 200 mhz 1200 mhz 3 2 vswr = voltage standing wave ratio 3 no parasitic oscillations (all spurious < 70 dbc) switching characteristics amps/nadc and gsm operation, v cc = 3.6 v or 4.8 v, t a = 25 c parameter test conditions min typ max unit t on switching time, rf output off to on txen = high, vpc stepped from 0 v to 3 v 1 m s t off switching time, rf output on to off txen = high, vpc stepped from 3 v to 0 v 1 m s
trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 5 post office box 655303 ? dallas, texas 75265 typical characteristics figure 1 25 p i input power dbm 20 15 10 5 0 5 20 15 10 5 p o output power dbm v cc = 4.8 v vpc = 3 v freq = 900 mhz output power vs input power 25 c 85 c 40 c/25 c figure 2 25 p i input power dbm 20 15 10 5 0 5 20 15 10 5 0 pae power added efficiency % 35 30 25 c 40 c v cc = 4.8 v vpc = 3 v freq = 900 mhz power added efficiency vs input power 85 c figure 3 22 f frequency mhz 860 870 880 890 900 940 21.5 21 20.5 20 pae power added efficiency % 23 22.5 v cc = 4.8 v vpc = 3 v p i = 0 dbm output power and power added efficiency vs frequency p o output power dbm 30 28 26 24 22 34 32 25 c 40 c 85 c 40 c 25 c 85 c pae p o 910 920 930
trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 6 post office box 655303 ? dallas, texas 75265 typical characteristics figure 4 20 vpc power control input v 0 0.5 1 1.5 2 2.5 30 40 50 60 30 10 output power vs vpc gain control range p o output power dbm 40 c 25 c 85 c 3 p i = 0 dbm v cc = 4.8 v freq = 900 mhz 10 0 20 figure 5 v cc supply voltage v 3 3.5 4 4.5 20 18 23 21 output power vs supply voltage p o output power dbm 5 3.6 v amps/nadc application circuit vpc = 3 v freq = 836 mhz r1 = 0 w 22 19 4.8 v gsm application circuit vpc = 3 v freq = 900 mhz r1 = 180 w figure 6 10 f frequency mhz 860 870 880 890 900 940 10.5 11 11.5 12 9 9.5 v cc = 4.8 v vpc = 3 v p i = 20 dbm input return loss vs frequency input return loss db 40 c 85 c 910 920 930 25 c
trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 7 post office box 655303 ? dallas, texas 75265 application information a typical application example for amps/nadc cellular telephone systems is shown in figure 7. in all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to the ic terminals for power supply bypassing. a dc-blocking capacitor is also required on the rf output. a list of components and their functions is given in table 1. gnd gnd rfout gnd gnd txen gnd v cc v cc gnd gnd gnd rfin gnd nc vpc gnd nc v bb gnd 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 rf output l2 c1 c2 v cc trf8010 c4 rf input l = 220 mils, w = 20 mils 50 w line, w = 20 mils 50 w line, w = 20 mils board material: type fr4, e r = 4.3, h = 12 mils l1 50 w line, w = 20 mils c3 figure 7. typical amps/nadc cellular telephone application table 1. external component selection (amps/nadc) component typical value function designation (amps/nadc) function c1 3.3 pf output impedance matching capacitor c2 100 pf dc-blocking capacitor for rf output c3 100 pf matching capacitor c4 1000 pf power supply decoupling capacitor l1 5.7 nh output impedance matching inductor l2 100 nh dc bias/rf choke
trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 8 post office box 655303 ? dallas, texas 75265 application information a typical application example for gsm cellular telephone systems is shown in figure 8. in all cases, a capacitor must be connected from the positive power supply to ground, as close as possible to the ic terminals for power supply bypassing. a dc-blocking capacitor is also required on the rf output. a list of components and their functions is given in table 2. gnd gnd rfout gnd gnd txen gnd v cc v cc gnd gnd gnd rfin gnd nc vpc gnd nc v bb gnd 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 rf output l2 c1 c2 v cc trf8010 c4 rf input l = 220 mils, w = 20 mils 50 w line, w = 20 mils 50 w line, w = 20 mils board material: type fr4, e r = 4.3, h = 12 mils l1 50 w line, w = 20 mils c3 r1 figure 8. typical gsm cellular telephone application table 2. external component selection (gsm) component typical value function designation (gsm) function c1 3.3 pf output impedance matching capacitor c2 100 pf dc-blocking capacitor for rf output c3 100 pf matching capacitor c4 1000 pf power supply decoupling capacitor l1 6.8 nh output impedance matching inductor l2 100 nh dc bias/rf choke r1 180 w bias supply resistor
trf8010 900-mhz rf transmit driver slws031b july 1996 revised may 1997 9 post office box 655303 ? dallas, texas 75265 mechanical data pwp (r-pdso-g**) powerpad ? plastic small-outline package 0,25 0,50 0,75 0,15 nom gage plane 4073225/e 03/97 6,60 6,20 0,30 0,19 11 4,30 4,50 10 20 a 1 1,20 max seating plane 0 8 thermal pad (3,18 2,41 nom) (see note c) 0,10 0,65 m 0,10 28 9,80 24 7,90 9,60 7,70 16 5,10 14 5,10 4,90 4,90 dim a max a min pins ** 6,40 6,60 20 0,15 0,05 notes: a. all linear dimensions are in millimeters. b. this drawing is subject to change without notice. c. the package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane. this solderable pad is electrically and thermally connected to the backside of the die and leads 1, 10, 11, and 20. powerpad is a trademark of texas instruments incorporated.
important notice texas instruments and its subsidiaries (ti) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. ti warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with ti's standard warranty. testing and other quality control techniques are utilized to the extent ti deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage (acritical applicationso). ti semiconductor products are not designed, authorized, or warranted to be suitable for use in life-support devices or systems or other critical applications. inclusion of ti products in such applications is understood to be fully at the customer's risk. in order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. ti assumes no liability for applications assistance or customer product design. ti does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of ti covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. ti's publication of information regarding any third party's products or services does not constitute ti's approval, warranty or endorsement thereof. copyright ? 1998, texas instruments incorporated
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